AO6424 30v n-channel mosfet v ds i d (at v gs =10v) 5a r ds(on) (at v gs =10v) < 31m w r ds(on) (at v gs =4.5v) < 43m w symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl junction and storage temperature range -55 to 150 c power dissipation b p d t a =70c 0.8 w 1.25 t a =25c units thermal characteristics parameter typ max the AO6424 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. this device may be used as a load switch or in pwm applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v drain-source voltage 30 i d maximum junction-to-ambient a d v 20 continuous drain current 5 gate-source voltage 4 t a =25c t a =70c pulsed drain current c c/w r q ja 70 maximum junction-to-ambient a 82 110 100 20 a maximum junction-to-lead c/w c/w 56 130 g d s d d g d s d top view general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.4 v i d(on) 25 a 25.5 31 t j =125c 41 50 34 43 m w g fs 15 s v sd 0.76 1 v i s 1.5 a c iss 255 310 pf c oss 45 pf c rss 35 50 pf r g 1.6 3.25 4.9 w q g(10v) 5.2 6.3 nc qg (4.5v) 2.55 3.2 q gs 0.85 nc q gd 1.3 nc t d(on) 4.5 ns t r 2.5 ns t d(off) 14.5 ns t f 3.5 ns t rr 8.5 ns q rr 2.2 nc input capacitance output capacitance turn-on rise time i f =5a, di/dt=100a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters body diode reverse recovery charge v ds =v gs i d =250 m a v gs =4.5v, i d =4a forward transconductance body diode reverse recovery time v gs =10v, i d =5a reverse transfer capacitance i f =5a, di/dt=100a/ m s maximum body-diode continuous current m w v gs =10v, v ds =15v, r l =3 w , r gen =3 w dynamic parameters turn-off delaytime turn-on delaytime gate resistance v gs =0v, v ds =0v, f=1mhz v ds =5v, i d =5a r ds(on) static drain-source on-resistance i dss m a zero gate voltage drain current turn-off fall time total gate charge v gs =10v, v ds =15v, i d =5a gate source charge gate drain charge i s =1a,v gs =0v diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =10v, v ds =5v v ds =0v, v gs =20v gate-body leakage current a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. AO6424 30v n-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 5 10 15 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 20 25 30 35 40 0 3 6 9 12 15 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =10v i d =5a v gs =4.5v i d =4a 20 40 60 80 100 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v i d =5a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 7v 10v 3.5v 4v 4.5v v gs =10v AO6424 30v n-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =15v i d =5a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 11: single pulse power rating junction-to- ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) z q q q q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =130c/w single pulse AO6424 30v n-channel mosfet www.freescale.net.cn 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr AO6424 30v n-channel mosfet www.freescale.net.cn 5 / 5
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